Research Interests:
La base de la photopile (n+/p/p+) au silicium a multi-jonctions verticalesconnactees en serie(MJVS) de dopage Nb, est placee sous illumination monochromatique (a(l)) en modulation de frequence(w). La resolution de lequation de diffusion... more
La base de la photopile (n+/p/p+) au silicium a multi-jonctions verticalesconnactees en serie(MJVS) de dopage Nb, est placee sous illumination monochromatique (a(l)) en modulation de frequence(w). La resolution de lequation de diffusion relative a la densite des porteurs de charge photogeneresd(x, t) est constituee de termes tels que:-le coefficient de diffusion dynamique D(w, Nb) et les termes de recombinaison, fonction de la frequence de modulation de lexcitation lumineuse et du taux de dopage Nb-le taux de generation G(w, t)Les conditions aux limites despace prenant en compte les vitesses de recombinaison surfaciques (Sf) et Sb, respectivement a la jonction (n+/p) a la face arriere (p/p+), ont permis de completer la solution de lequation de diffusion des porteurs de charge photogeneres. De la densite des porteurs minoritaires d(x, t) solution de lequation de diffusion, obtenue dune base de taux de dopage Nb, la capacite de diffusion C(w, a(l), Sf, Sb, Nb) est deduite.La reponse c...
Research Interests:
In this work, a method to determine the optimum thickness of a vertical series junction silicon solar cell by the intersection of back surface recombination velocities is proposed. The vertical series junction Silicon solar cell is... more
In this work, a method to determine the optimum thickness of a vertical series junction silicon solar cell by the intersection of back surface recombination velocities is proposed. The vertical series junction Silicon solar cell is studied under magnetic field inducing the diffusion coefficient D (B). The optimum base thickness is obtained by intersection of two back surface recombination velocities curves who’s the expressions are function base thickness and magnetic field.
The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell... more
The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell was already subjected to charged particules irradiation flux (Φp) and intensity (kl,) and remained under both magnetic field (B) and temperature (T). Thus, the graphical representation of the relative value of the short-circuit photocurrent density as a function of the square of the magnetic field (B) yields to determine the slope, which is related to the mobility of minority carriers in the base. It is obtained for a back surface field silicon solar cellunder both temperature and irradiation flux of charged particules.